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We develop a systematic theory for excitons subject to Fermi-Hubbard physics in moiré twisted transition metal dichalcogenides (TMDs). Specifically, we consider excitons from two moiré bands with a Mott-insulating valence band sustaining 120 spin order. These “Mott-moiré excitons,” which are achievable in twisted TMD heterobilayers, are bound states of a magnetic polaron in the valence band and a free electron in the conduction band. We find significantly narrower exciton bandwidths in the presence of Hubbard physics, serving as a potential experimental signature of strong correlations. We also demonstrate the high tunability of Mott-moiré excitons through the dependence of their binding energies, diameters, and bandwidths on the moiré period. In addition, we study bound states between charges outside of the strongly correlated moiré band and find that these as well exhibit signatures of spin correlation. Our work provides guidelines for future exploration of strongly correlated excitons in triangular Hubbard systems such as twisted TMD heterobilayers. 

Abstract Moiré lattices formed in twisted van der Waals bilayers provide a unique, tunable platform to realize coupled electron or exciton lattices unavailable before. While twist angle between the bilayer has been shown to be a critical parameter in engineering the moiré potential and enabling novel phenomena in electronic moiré systems, a systematic experimental study as a function of twist angle is still missing. Here we show that not only are moiré excitons robust in bilayers of even large twist angles, but also properties of the moiré excitons are dependant on, and controllable by, the moiré reciprocal lattice period via twist-angle tuning. From the twist-angle dependence, we furthermore obtain the effective mass of the interlayer excitons and the electron inter-layer tunneling strength, which are difficult to measure experimentally otherwise. These findings pave the way for understanding and engineering rich moiré-lattice induced phenomena in angle-twisted semiconductor van der Waals heterostructures.